Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement (vol 6, 095021, 2016)

被引：3
|
作者：
Dong, Bin [1 ,2 ]
Lin, Jie [1 ,2 ]
Wang, Ning [1 ,2 ]
Jiang, Ling-li [1 ,2 ]
Liu, Zong-dai [1 ,2 ]
Hu, Xiaoyan [1 ,2 ]
Cheng, Kai [3 ]
Yu, Hong-yu [1 ,2 ]
机构：
[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
[2] Shenzhen Key Lab 3rd Generat Semicond Devices, Shenzhen, Peoples R China
[3] Enkris Semicond Inc, NW 20v,99 Jinji Ave, Suzhou 215123, Peoples R China
来源：
AIP ADVANCES | 2016年 / 6卷 / 10期
关键词：
D O I：
10.1063/1.4966916
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页数：1
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