Present and Future Applications of Silicon Carbide Devices and Circuits

被引：0
|
作者：
Zetterling, Carl-Mikael [1 ]
机构：
[1] KTH Royal Inst Technol, Dept Integrated Devices & Circuits, Stockholm, Sweden
来源：
2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2012年
关键词：
Silicon carbide; high voltage; high temperature;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon Carbide (SiC) is a wide bandgap semiconductor now reaching maturity. Discrete high-voltage SiC devices are commercially available from several suppliers for low-loss power conversion. Future applications may include integrated circuits for high-temperature and radiation-hard applications. This paper introduces SiC material properties, processing, devices, and circuits.
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页数：8
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