Scalable large-signal device model for high power-density AlGaN/GaN HEMTs on SIC

被引：0

作者：

Lee, JW ^{[1
]}

Lee, S ^{[1
]}

Webb, KJ ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scalable device model for high-power, large periphery AlGaN/GaN HEMTs on SiC has been developed which includes device self-heating. The parameterized model coefficients were evaluated using S-parameters obtained from isothermal bias contours and pulsed I-V measurements. Model scaling with device size was examined by comparing with measurements for peripheries from 0.25 mm to 1.5 mm. The scaled model showed good agreement with measured S-parameters and power sweep data.

引用

页码：679 / 682

页数：4

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