Growth of high-density InGaSb quantum dots on silicon atoms irradiated GaAs substrates

被引：16
|
作者：
Yamamoto, N [1 ]
Akahane, K [1 ]
Ohtani, N [1 ]
机构：
[1] Basic & Adv Res Div, Commun Res Lab, Tokyo 1848795, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期
关键词：
quantum dots; anti-surfactant; GaSb; InGaSb;
D O I：
10.1016/j.physe.2003.11.015
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We discuss a technique that allows us to grow high-density GaSb and InGaSb quantum dots (QDs) on (001)-oriented GaAs substrates. We study the use of Si atom irradiation on the substrate surface as an anti-surfactant before the QDs fabrication. It is clear that the densities of GaSb and InGaSb QDs are drastically enhanced with the Si atom irradiation. Photoluminescence intensities from these QDs are also increased with the Si atom irradiation. These results indicate that the Si atom irradiation technique is useful to improve the properties of the Sb-based QDs. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：322 / 325
页数：4
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