THz quantum semiconductor devices

被引：0
|
作者：
Liu, HC [1 ]
Luo, H
Ban, D
Wächter, M
Song, CY
Wasilewski, ZR
Buchanan, M
Aers, GC
SpringThorpe, AJ
Cao, JC
Feng, SL
Williams, BS
Hu, Q
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[3] MIT, Dept Elect Engn & Comp Sci, Elect Res Lab, Cambridge, MA 02139 USA
来源：
ICO20: MATERIALS AND NANOSTRUCTURES | 2006年 / 6029卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Terahertz (1 - 10 THz) quantum-well photodetectors and quantum-cascade lasers have been investigated. The design and projected detector performance are presented together with experimental results on several test devices, all working at photon energies below the optical phonons. Background limited infrared performance (BLEP) operations were observed for all samples (three in total) designed for different wavelengths. For lasers, a set of THz quantum-cascade lasers with identical device parameters except for the doping concentration has been studied. The delta-doping density for each period was varied from 3.2 x 10(10) to 4.8 x 10(10) cm(-2). We observed that the lasing threshold current increased monotonically with doping. Moreover, the measured results on devices with different cavity lengths provided evidence that the free carrier absorption caused waveguide loss also increased monotonically. Interestingly however, the observed maximum lasing temperature displayed an optimum at a doping density of 3.6 x 10(10) cm(-2).
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页数：10
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