The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films

被引：111
|
作者：
Benouis, C. E. [2 ]
Benhaliliba, M. [2 ]
Sanchez Juarez, A. [3 ]
Aida, M. S. [4 ]
Chami, F. [5 ]
Yakuphanoglu, F. [1 ]
机构：
[1] Firat Univ, Dept Phys, Fac Sci & Arts, TR-23119 Elazig, Turkey
[2] USTOMB Univ, Fac Sci, Dept Phys, Oran, Algeria
[3] UNAM, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
[4] Mentouri Univ, Dept Phys, Thin Films & Plasma Lab, Constantine 25000, Algeria
[5] Sheffield Hallam Univ, MERI, Sheffield S1 1WB, S Yorkshire, England
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 490卷 / 1-2期
关键词：
ZnO; Spray pyrolysis; Indium doping; Photoconductivity; OXIDE THIN-FILMS; ZINC-OXIDE; OPTICAL-PROPERTIES; SN DOPANTS; SPRAY; AL; DEPOSITION; CONSTANTS; THICKNESS;
D O I：
10.1016/j.jallcom.2009.10.098
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of IZO thin films has been investigated. X-rays diffraction spectra show that the IZO films are polycrystalline of wurtzite structure with preferential orientation of (002) direction. The IZO thin film for doping level of 2% exhibits the lowest resistivity of 6 x 10(-3) (Omega cm) compared to undoped ZnO of 17 (Omega cm). The optical gaps of the IZO thin films were determined using optical transmission spectra and the obtained optical band gap value increases slightly from 3.28 eV to 3.35 eV due to the indium doping. The IZO film indicates a strong photoconductivity with indium doping level. The density of states, traps concentration and relaxation time for the films were calculated using Laplace transform method and these parameters change with In doping level. It is evaluated that In doping has an important effect on the electronic and optical properties of ZnO thin films. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：62 / 67
页数：6
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