Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography

被引:217
|
作者
Austin, MD [1 ]
Chou, SY [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, NanoStruct Lab, Princeton, NJ 08540 USA
关键词
D O I
10.1063/1.1526457
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication of short-channel polymer organic thin-film transistors (OTFTs) using nanoimprint lithography. Currently, there is significant interest in OTFTs due to their potential application in inexpensive, large-area electronics. However, polymer carrier mobilities are typically poor, and thus to increase the OTFT drive current per unit area, there is a need for short-channel devices. We have fabricated working devices with channel lengths from 1 mum down to 70 nm with high yields. The performance of these devices was studied as the channel length was reduced. We find that drive current density increases as expected, while the on/off current ratio remains 10(4). However, at short-channel lengths, OTFTs no longer saturate due to space charge limiting current effects. (C) 2002 American Institute of Physics.
引用
收藏
页码:4431 / 4433
页数:3
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