Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications

被引：12

作者：

Caliskan, Can ^{[1
]}

Kalyoncu, Ilker ^{[1
]}

Yazici, Melik ^{[1
]}

Kaynak, Mehmet ^{[2
]}

Gurbuz, Yasar ^{[1
]}

机构：

[1] Sabanci Univ, Fac Engn Nat Sci, Dept Elect Engn, TR-34956 Istanbul, Turkey

[2] IHP Microelect, Technol Dept, D-15236 Frankfurt, Germany

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2019年 / 66卷 / 09期

关键词：

Low-noise amplifier; noise; BiCMOS integrated circuits; transceivers; LOW-POWER; LNAS; CIRCLES;

D O I：

10.1109/TCSII.2019.2891133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents, a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in common-emitter configuration. The presented amplifier stage can achieve sub-1 dB NF performance with similar to 10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm(2). It succeeds 1.5 dBm of input-referred compression point. To the best of authors' knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.

引用

页码：1507 / 1511

页数：5

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