Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation

被引：1
|
作者：
Ohno, Yutaka
Takeda, Seiji
Ichihashi, Toshinari
Iijima, Sumio
机构：
[1] Osaka Univ, Dept Phys, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
[2] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[3] Meijo Univ, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 01期
关键词：
surface nanoholes; silicon; electron irradiation; surface vacancies; migration under electron irradiation;
D O I：
10.1143/JJAP.46.434
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon surface nanoholes, which are small pits introduced spontaneously on the electron exit surfaces of silicon foils by electron irradiation, distribute orderly in a short range. The nearest-neighbor distance and mean opening area of the nanoholes exhibit an Arrhenius-like behavior at high temperatures. The formation mechanism is discussed in terms of the migration of surface vacancies under electron irradiation conditions, and the activation energy of the migration is estimated to be 0.3 +/- 0.04 eV.
引用
收藏
页码：434 / 439
页数：6
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