Theoretical analysis of the impurity distribution in single-crystal silicon

被引：0

作者：

Ponomarev, KV

Korzhavyi, PA

Velikov, YK

机构：

[1] Moscow State Inst. Stl. and Alloys

来源：

PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 08期

关键词：

D O I：

10.1134/1.1130049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Results are presented for the total energies calculated for oxygen and carbon impurities in silicon at T=0 K. The equilibrium positions of these point defects are determined at low (10(-3)-10(-2) at. %) concentrations. (C) 1997 American Institute of Physics.

引用

页码：1228 / 1229

页数：2

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