Theoretical analysis of the impurity distribution in single-crystal silicon

被引：0
|
作者：
Ponomarev, KV
Korzhavyi, PA
Velikov, YK
机构：
[1] Moscow State Inst. Stl. and Alloys
来源：
PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 08期
关键词：
D O I：
10.1134/1.1130049
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Results are presented for the total energies calculated for oxygen and carbon impurities in silicon at T=0 K. The equilibrium positions of these point defects are determined at low (10(-3)-10(-2) at. %) concentrations. (C) 1997 American Institute of Physics.
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收藏
页码：1228 / 1229
页数：2
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