Nitrided La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications

被引：15
|
作者：
Huang, X. D. [1 ]
Sin, Johnny K. O. [2 ,3 ,4 ,5 ]
Lai, P. T. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[4] Hong Kong Univ Sci & Technol, Nanoelect Fabricat Facil, Kowloon, Hong Kong, Peoples R China
[5] Hong Kong Univ Sci & Technol, Semicond Prod Anal & Design Enhancement Ctr, Kowloon, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2012年 / 12卷 / 02期
关键词：
Charge-trapping layer (CTL); high-k dielectric; metal-oxide-nitride-oxide-silicon (MONOS); nitrided La2O3; nonvolatile memory;
D O I：
10.1109/TDMR.2011.2182197
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charge-trapping characteristics of La2O3 with and without nitrogen incorporation were investigated based on Al/Al2O3/La2O3/SiO2/Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La2O3 as charge-trapping layer, the one with nitrided La2O3 showed a larger memory window (4.9 V at +/- 10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La2O3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.
引用
收藏
页码：306 / 310
页数：5
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