Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

被引：3

作者：

de Lyon, TJ ^{[1
]}

Rajavel, RD ^{[1
]}

Roth, JA ^{[1
]}

Jensen, JE ^{[1
]}

Olson, GL ^{[1
]}

Brewer, PD ^{[1
]}

Hunter, AT ^{[1
]}

Williamson, TS ^{[1
]}

Bailey, SL ^{[1
]}

Bangs, JW ^{[1
]}

Buell, A ^{[1
]}

Chapman, G ^{[1
]}

Childs, AC ^{[1
]}

Gordon, E ^{[1
]}

Jack, M ^{[1
]}

Johnson, SM ^{[1
]}

Kosai, K ^{[1
]}

Maranowski, K ^{[1
]}

Patten, E ^{[1
]}

Peterson, J ^{[1
]}

Pham, L ^{[1
]}

Radford, B ^{[1
]}

Randall, V ^{[1
]}

Varesi, J ^{[1
]}

Wilson, J ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

MATERIALS FOR INFRARED DETECTORS | 2001年 / 4454卷

关键词：

HgCdTe; molecular-beam epitaxy; MBE; infrared detectors; avalanche photodiodes; focal-plane arrays;

D O I：

10.1117/12.448189

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Since its initial synthesis and investigation more than 40 years ago, the HgCdTe alloy semiconductor system has evolved into one of the primary infrared detector materials for high-performance infrared focal-plane arrays (FPA) designed to operate in the 3-5 mum and 8-12 mum spectral ranges of importance for thermal imaging systems. Over the course of the past decade, significant advances have been made in the development of thin-film epitaxial growth techniques, such as molecular-beam epitaxy (MBE), which have enabled the synthesis of IR detector device structures with complex doping and composition profiles. The central role played by in situ sensors for monitoring and control of the MBE growth process are reviewed. The development of MBE HgCdTe growth technology is discussed in three particular device applications: avalanche photodiodes for 1.55 mum photodetection, megapixel FPAs on Si substrates, and multispectral IR detectors.

引用

页码：47 / 59

页数：13

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