Influence of He implantation dose on strain relaxation of pseudomorphic SiGe/Si heterostructure

被引：1

作者：

Liu, L. J. ^{[1
,2
]}

Xue, Z. Y. ^{[1
]}

Chen, D. ^{[1
,3
]}

Mu, Z. Q. ^{[1
,2
]}

Bian, J. T. ^{[1
]}

Jiang, H. T. ^{[1
]}

Wei, X. ^{[1
]}

Di, Z. F. ^{[1
]}

Zhang, M. ^{[1
]}

Wang, X. ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] Lanzhou Univ, Lanzhou 730000, Peoples R China

来源：

THIN SOLID FILMS | 2013年 / 542卷

基金：

中国国家自然科学基金;

关键词：

Strain relaxation; Dislocation; Epitaxy; Implantation; MISFIT DISLOCATIONS; SURFACE-MORPHOLOGY; EPITAXY; LAYERS; MECHANISM; SILICON;

D O I：

10.1016/j.tsf.2013.06.093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of He implantation dose on the strain relaxation of 180nm Si0.75Ge0.25/Si layers epitaxially grown on silicon is investigated. It is found that the strain relaxation of SiGe epilayer is facilitated by helium implantation, and the degree of strain relaxation increases with implantation dose. During the strain relaxation, misfit dislocation are mainly formed at the SiGe/Si interface, while no threading dislocations are observed in the epilayer. The dislocation loops emitted by the overpressurized He-filled nano-cavities promotes strain relaxation via both the propagation of two threading dislocation segments through the epilayer and the extension of the misfit dislocation segment located at the SiGe/Si heterointerface. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：129 / 133

页数：5

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