Bistable damage in neutron-irradiated silicon diodes

被引：3
|
作者：
Cindro, V
Kolar, J
Kramberger, G
Mikuz, M
Zavrtanik, M
机构：
[1] Univ Ljubljana, Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia
[2] Univ Ljubljana, Dept Phys, SI-1000 Ljubljana, Slovenia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 476卷 / 03期
关键词：
neutrons; radiation damage; bias; annealing; bistability;
D O I：
10.1016/S0168-9002(01)01643-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Standard and oxygenated high resistivity silicon diodes were irradiated with neutrons to fluences up to 2 x 10(14) cm(-2) 1 MeV neutron NIEL equivalent. After beneficial annealing at room temperature diodes were kept at 20degreesC. C-V measurements were performed regularly to determine the full depletion voltage. Bistable damage was activated with bias application to the diodes. Its creation rate was measured during different stages of reverse annealing, For a comparison, a change of full depletion voltage was determined also from TCT measurements. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：565 / 568
页数：4
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