Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots

被引：8
|
作者：
Lang, R [1 ]
机构：
[1] Tokyo Univ Agr & Technol, Dept Appl Phys, Koganei, Tokyo 1848588, Japan
[2] JST, CREST, Koganei, Tokyo 1848588, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期
关键词：
D O I：
10.1063/1.1426265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This brief letter discusses conceptual problems that appeared in recent analysis of injected carrier dynamics in semiconductor quantum dots. It is pointed out that the frequently adopted approximation of neglecting the upward relaxation transitions severely restricts the validity of rate equations analysis. The proposed alternative approach with master equations for the transitions between microstates has, in principle, validity equivalent with conventional rate equations, but the presented form of equations neglects the upward transitions and has inaccurate expressions for the downward flow contributions. (C) 2001 American Institute of Physics.
引用
收藏
页码：3912 / 3913
页数：2
相关论文
共 50 条
  • [1] Comment on "Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots" [Appl. Phys. Lett. 79, 3912 (2001)]
    Grundmann, M
    Heitz, R
    Bimberg, D
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (03) : 565 - 565
  • [2] Response to "Comment on 'Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots' " [Appl. Phys. Lett. 81, 565 (2002)]
    Lang, R
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (03) : 566 - 566
  • [3] Ultrafast carrier dynamics in semiconductor quantum dots
    Klimov, V
    Bolivar, PH
    Kurz, H
    [J]. PHYSICAL REVIEW B, 1996, 53 (03): : 1463 - 1467
  • [4] Ultrafast conditional carrier dynamics in semiconductor quantum dots
    Borri, Paola
    Langbein, Wolfgang
    [J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS XV, 2011, 7937
  • [5] Carrier relaxation dynamics in self-assembled semiconductor quantum dots
    Kurtze, H.
    Seebeck, J.
    Gartner, P.
    Yakovlev, D. R.
    Reuter, D.
    Wieck, A. D.
    Bayer, M.
    Jahnke, F.
    [J]. PHYSICAL REVIEW B, 2009, 80 (23):
  • [6] Ultrafast carrier dynamics in self-assembled semiconductor quantum dots
    Marcinkevicius, S
    Gaarder, A
    Leon, R
    [J]. SMART OPTICAL INORGANIC STRUCTURES AND DEVICES, 2001, 4318 : 13 - 21
  • [7] Carrier relaxation dynamics and ultrafast optical nonlinearities in semiconductor quantum dots
    Klimov, V
    Mikhailovsky, A
    Xu, S
    Malko, A
    Leatherdale, C
    Bawendi, M
    [J]. NONLINEAR OPTICS: MATERIALS, FUNDAMENTALS, AND APPLICATIONS, 2000, 46 : 140 - 142
  • [8] Carrier relaxation dynamics and ultrafast optical nonlinearities in semiconductor quantum dots
    Klimov, V.
    Mikhailovsky, A.
    Xu, S.
    Malko, A.
    Leatherdale, C.
    Bawendi, M.
    [J]. IEEE Nonlinear Optics: Materials, Fundamentals and Applications - Conference Proceedings, 2000, : 140 - 142
  • [9] Carrier multiplication in semiconductor quantum dots
    Moskalenko, S. A.
    Lelyakov, I. A.
    Podlesny, I., V
    [J]. PHYSICA B-CONDENSED MATTER, 2021, 604
  • [10] The role of the carrier mass in semiconductor quantum dots
    Singh, M
    Ranjan, V
    Singh, VA
    [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2000, 14 (17): : 1753 - 1765
12345