THE INFLUENCE OF THE ELECTRICALLY INACTIVE IMPURITY ON THE ENERGY SPECTRUM OF ELECTRON AND HOLE IN InAs/GaAs HETEROSTRUCTURE WITH InAs QUANTUM DOTS

In the framework of electron-deformation model, the influence of the electrically inactive impurity on the energy spectrum of electrons and holes in InAs/GaAs heterostructure with InAs quantum dots (QD) is investigated. Two cases are considered: the isovalent impurity of substitution and the neutral atom in the internode. It is established that the presence of the impurity in the center of spherical quantum dot leads to a decrease in energy of radiation, which corresponds to the recombination transition between the ground states of electron and hole. This effect is better manifested for small quantum dots and in the presence of interstitial impurity.