Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate

被引：13

作者：

Lee, Jae Woo ^{[1
,2
]}

Simoen, Eddy ^{[1
]}

Veloso, Anabela ^{[1
]}

Cho, Moon Ju ^{[1
]}

Arimura, Hiroaki ^{[1
,2
]}

Boccardi, Guillaume ^{[1
]}

Ragnarsson, Lars-Ake ^{[1
]}

Chiarella, Thomas ^{[1
]}

Horiguchi, Naoto ^{[1
]}

Thean, Aaron ^{[1
]}

Groeseneken, Guido ^{[1
,2
]}

机构：

[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT Dept, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 09期

关键词：

Charge trapping; FinFET; high-k last; low frequency noise; replacement metal gate (RMG);

D O I：

10.1109/TED.2013.2274152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Post-treatment of replacement metal gate is investigated for the device performance improvement of high-k last p-type bulk FinFET using post-deposition annealing (PDA) and SF6 plasma treatment. Compared with untreated HfO2 reference, post-high-k deposition PDA and SF6 plasma-treated devices show improved driving current and hole mobility. With the carrier number fluctuations with correlated mobility fluctuation model, similar to 3 times lower input gate referred noise is observed in PDA and SF6 plasma-treated devices compared with untreated FinFETs. Post-treatments suppress the trap density of high-k last FinFET. PDA reduces oxide bulk trap whereas SF6 plasma affects both interface and oxide bulk trap.

引用

页码：2960 / 2962

页数：3

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