A High Responsivity SnO2 Hollow Nanospheres Based Ultraviolet Photodetector

被引：0
|
作者：
Sharma, P. [1 ]
Sawyer, S. [1 ]
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
PROCEEDINGS OF THE 25TH BIENNIAL LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2016年
关键词：
tin oxide; hollow nanospheres; UV photodetector; high responsivity; NANOPARTICLES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hollow spherical nano structures have shown great potential in the field of optoelectronics. As a wide band gap material, SnO2 has electrical and optical properties well suited for its use in fabrication of ultraviolet photodetectors. This paper presents the synthesis and characterization of SnO2 hollow nanospheres. The spheres are used as active material to fabricate a UV photodetector. The electrical characteristics of the device have also been presented. The fabricated detector exhibits a peak UV responsivity of 2680 A/W and high external quantum efficiency of 9.8 x 105%. This paper shows SnO2 hollow nanospheres as a promising material for fabricating high sensitivity ultraviolet photodetectors.
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页码：46 / 49
页数：4
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