Extraordinary Hall balance in ultrathin SrRuO3 bilayers

被引：9
|
作者：
van Thiel, T. C. [1 ]
Groenendijk, D. J. [1 ]
Caviglia, A. D. [1 ]
机构：
[1] Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands
来源：
JOURNAL OF PHYSICS-MATERIALS | 2020年 / 3卷 / 02期
基金：
欧洲研究理事会;
关键词：
oxide interfaces; spintronics; topological electronics; RESISTIVE ANOMALIES; THIN-FILMS;
D O I：
10.1088/2515-7639/ab7a03
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The correlated 4d transition metal oxide SrRuO3 (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO3 (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.
引用
收藏
页数：6
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