Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering

被引：0
|
作者：
Kuan, Chin-I [1 ]
Lin, Horng-Chih
Li, Pei-Wen
Huang, Tiao-Yuan
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, 1001 Ta Hsueh Rd, Hsinchu, Taiwan
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Short-channel zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated based on the film profile engineering in combination with e-beam lithographical patterning. ZnON films were deposited using reactive magnetron sputtering in N-2/O-2 ambient and exhibit a Hall mobility of 95 cm(2)/V-s. A ZnON TFT with channel length of 147nm shows high on/off current ratio of 5x10(7) and field-effect mobility of 9.1 cm(2)/Vs, which are superior or comparable to their counterparts of IGZO or ZnO TFTs.
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页码：66 / 67
页数：2
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