Arsenic ion implantation into SIMOX

被引：0

作者：

Onda, T ^{[1
]}

Atumi, N ^{[1
]}

Hasegawa, Y ^{[1
]}

Watanabe, T ^{[1
]}

Kakizaki, Y ^{[1
]}

Hara, T ^{[1
]}

Kaneko, S ^{[1
]}

Naka, T ^{[1
]}

Sakiyama, K ^{[1
]}

机构：

[1] HOSEI UNIV,KOGANEI,TOKYO 184,JAPAN

来源：

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO 14, MARCH 1996 | 1996年

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：105 / 110

页数：6

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