Thermal measurement for verification of power loss in semiconductor switching devices

被引：0

作者：

Nowak, Mieczyslaw ^{[1
]}

Grzejszczak, Piotr ^{[1
]}

Zdanowski, Mariusz ^{[1
]}

Barlik, Roman ^{[1
]}

机构：

[1] Warsaw Univ Sci & Technol, Inst Sterowania & Elekt Przemyslowej, PL-00662 Warsaw, Poland

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2012年 / 88卷 / 4B期

关键词：

fast switch selection; energy losses in power MOSFETs; bridge power MOSFET leg; dual active bridge; thermograph power loss measurement; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the paper investigations dedicated to development of measurement methods of power loss in fast semiconductor switches such as MOSFET or IGBT are presented. During the design of converters with high switching frequencies the estimation of switching power losses based on recorded switch current and voltage curves is difficult and does not provide adequate results. The method of quantitative measurement of semiconductor switch power losses with the use of thermal steady state picture registration is described and illustrated with laboratory result examples (Thermal measurement for verification of power loss in semiconductor switching devices)

引用

页码：163 / 168

页数：6

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