Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

被引：64
|
作者：
Ershov, M [2 ]
Liu, HC
Buchanan, M
Wasilewski, ZR
Ryzhii, V
机构：
[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA
[2] UNIV AIZU,COMP SOLID STATE PHYS LAB,AIZU WAKAMATSU 96580,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期
关键词：
D O I：
10.1063/1.118320
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonlinear photoconductivity effects at high excitation power in quantum well infrared photodetectors (QWIPs) are studied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistribution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP. As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease resulting in a decrease of responsivity. (C) 1997 American Institute of Physics.
引用
收藏
页码：414 / 416
页数：3
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