Field-effect surface chemistry: chemical reactions on two-dimensional materials controlled by field-effect transistor configurations

被引:0
|
作者
Nouchi, Ryo [1 ,2 ,3 ]
机构
[1] Osaka Prefecture Univ, Dept Phys & Elect, Dept Phys & Elect, Sakai 5998570, Japan
[2] Osaka Metropolitan Univ, Osaka Metropolitan Univ, Dept Phys & Elect, Sakai 5998570, Japan
[3] PRESTO, Japan Sci & Technol Agcy, Kawaguchi 3320012, Japan
来源
NANO EXPRESS | 2022年 / 3卷 / 02期
关键词
surface chemical reaction; field-effect transistor; two-dimensional material; graphene; SELF-ASSEMBLED MONOLAYERS; GRAPHENE; DISSOCIATION; MOLECULES; TIP;
D O I
10.1088/2632-959X/ac603f
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Because chemical reactions are largely governed by the movement of electrons, it is possible to control chemical reactions using electronic devices that provide functionality by controlling the movement of electrons in a solid. In this perspective, we discuss the concept of 'field-effect surface chemistry,' which controls chemical reactions on two-dimensional materials using field-effect transistors (FETs), a representative electronic device. The electrical voltages to be applied for the FET operation are the gate voltage and drain voltage. The former is expected to control the Fermi level and exert the effect of the electric field directly on the reactants, while the latter is expected to provide local heating by Joule heat and energy transfer to the reactants. Further, we discuss a sample structure that does not require any voltage but has the same effect as the gate voltage.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] AMBIPOLAR FIELD-EFFECT TRANSISTOR
    PFLEIDERER, H
    KUSIAN, W
    SOLID-STATE ELECTRONICS, 1986, 29 (03) : 317 - 319
  • [42] Tight-Binding Study of Polarons in Two-Dimensional Systems: Implications for Organic Field-Effect Transistor Materials
    Lei, Jie
    Shimoi, Yukihiro
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2011, 80 (03)
  • [44] Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
    Natori, K
    Kimura, Y
    Shimizu, T
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
  • [45] Chemical sensing with ZnO nanowire field-effect transistor
    Fan, Zhiyong
    Lu, Jia G.
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (04) : 393 - 396
  • [46] Detecting nitrate with chemical field-effect transistor sensors
    Fehr, Julia
    Fontenot, Sean
    Haley, Michael
    Johnson, Darren
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2018, 255
  • [47] Three-dimensional integration of two-dimensional field-effect transistors
    Jayachandran, Darsith
    Pendurthi, Rahul
    Sadaf, Muhtasim Ul Karim
    Sakib, Najam U.
    Pannone, Andrew
    Chen, Chen
    Han, Ying
    Trainor, Nicholas
    Kumari, Shalini
    Mc Knight, Thomas V.
    Redwing, Joan M.
    Yang, Yang
    Das, Saptarshi
    NATURE, 2024, 625 (7994) : 276 - 281
  • [48] Three-dimensional integration of two-dimensional field-effect transistors
    Darsith Jayachandran
    Rahul Pendurthi
    Muhtasim Ul Karim Sadaf
    Najam U Sakib
    Andrew Pannone
    Chen Chen
    Ying Han
    Nicholas Trainor
    Shalini Kumari
    Thomas V. Mc Knight
    Joan M. Redwing
    Yang Yang
    Saptarshi Das
    Nature, 2024, 625 : 276 - 281
  • [49] Imperfect two-dimensional topological insulator field-effect transistors
    Vandenberghe, William G.
    Fischetti, Massimo V.
    NATURE COMMUNICATIONS, 2017, 8
  • [50] Imperfect two-dimensional topological insulator field-effect transistors
    William G. Vandenberghe
    Massimo V. Fischetti
    Nature Communications, 8