Precipitation in low temperature grown GaAs

被引：4
|
作者：
Herms, M
Irmer, G
Goerigk, G
Bedel, E
Claverie, A
机构：
[1] Branch Lab Dresden, Fraunhofer Inst Non Destruct, D-01326 Dresden, Germany
[2] Tech Univ Freiberg, Bergakad Freiberg, D-09596 Freiberg, Germany
[3] Forschungszentrum Julich, Inst Festkorperforsch, Julich, Germany
[4] CNRS, LAAS, F-31077 Toulouse, France
[5] CNRS, CEMES, F-31055 Toulouse, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷
关键词：
low temperature grown gallium arsenide; arsenic precipitates; anomalous small angle X-ray scattering; Raman scattering; transmission electron microscopy;
D O I：
10.1016/S0921-5107(01)01004-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time the anomalous small angle X-ray scattering (ASAXS). All the results agree that the average size increases with increasing annealing temperature but the ASAXS data indicate that the precipitates can be divided into two parts described by separate size distributions. The number density of precipitates around 5 nm size has been estimated to be at least two orders of magnitude higher than that of larger precipitates. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：466 / 469
页数：4
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