Photoluminescence of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

P-type silicon wafer (< 100 > orientation; boron doping; 0.75 similar to 10 Omega cm(-1)) was used to prepare samples of porous silicon nanostructures. All the samples have been prepared by using photo-electrochemical anodization. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm(2)), sample B (J=20 mA/cm(2)), sample C (J=30 mA/cm(2)), sample D (J=40 mA/cm(2)) and sample E (J=50 mA/cm(2)). Photoluminescence (PL) spectra were investigated. Sample B gives the maximum peak position of PL spectrum at similar to 675 nm.