CMOS Schottky diode microwave power detector fabrication, Spice modeling, and applications

被引：0
|
作者：
Jeon, W [1 ]
Melngailis, J [1 ]
Newcomb, RW [1 ]
机构：
[1] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
来源：
DELTA 2006: THIRD IEEE INTERNATIONAL WORKSHOP ON ELECTRONIC DESIGN, TEST AND APPLICATIONS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35 mu CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schotkty diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.
引用
收藏
页码：17 / +
页数：2
相关论文
共 50 条
  • [1] CMOS foundry Schottky diode microwave power detector fabrication, Spice modeling, and application
    Jeon, W
    Melngailis, J
    2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 308 - +
  • [2] Design and fabrication of Schottky diode, on-chip RF power detector
    Jeon, W
    Firestone, TM
    Rodgers, JC
    Melngailis, J
    SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 2089 - 2093
  • [3] Thermoelectric power sensor for microwave applications by commercial CMOS fabrication
    Milanovic, V
    Gaitan, M
    Bowen, ED
    Tea, NH
    Zaghloul, ME
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) : 450 - 452
  • [4] RESONANT TUNNELING MICROWAVE DETECTOR DIODE FOR POWER LEVELING AND LIMITING APPLICATIONS
    SYME, RT
    KELLY, MJ
    CONDIE, A
    DALE, I
    ELECTRONICS LETTERS, 1991, 27 (22) : 2025 - 2026
  • [5] Reflection of a power microwave from a Schottky diode
    Belyavskii, AA
    Borisov, VI
    Dmitriev, SG
    RADIOTEKHNIKA I ELEKTRONIKA, 1996, 41 (06): : 679 - 683
  • [6] Novel SPICE macro modeling for an integrated Si Schottky barrier diode
    Ku, Janam
    Min, Younghoon
    Lee, Donghyun
    Song, Iljong
    Shim, Dongsig
    Lee, Namkyoung
    Lee, Seonghearn
    Lee, Yongtaek
    Choi, Munsung
    Kim, Jonghyck
    GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS, 2005, : 409 - 412
  • [7] TIME-DOMAIN MODELING OF A MICROWAVE SCHOTTKY DIODE
    HE, JQ
    ELNABY, MA
    ELSHABINIRIAD, A
    SOLID-STATE ELECTRONICS, 1994, 37 (10) : 1753 - 1758
  • [8] Micromachined thermocouple microwave detector by commercial CMOS fabrication
    Milanovic, V
    Gaitan, M
    Zaghloul, ME
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (05) : 550 - 553
  • [9] CMOS Schottky diodes for photo-detector and thermal-detector applications
    Han, Ji-Hun
    Jeon, Woochul
    Melngailis, John
    2006 IEEE SENSORS, VOLS 1-3, 2006, : 1493 - +
  • [10] MICROWAVE CHARACTERISTICS OF THE SCHOTTKY-BARRIER DIODE POWER SENSOR
    CULLEN, AL
    AN, TY
    IEE PROCEEDINGS-H MICROWAVES ANTENNAS AND PROPAGATION, 1982, 129 (04) : 191 - 198
12345