High power LDMOS integrated Doherty amplifier for W-CDMA.

被引：0
|
作者：
Blednov, I. I.
van der Zanden, Jos
机构：
来源：
2006 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers | 2006年
关键词：
Doherty amplifier; high efficiency; LDMOS; MMIC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To our knowledge a first integrated Doherty amplifier in a standard SOT502 package has been developed for WCDMA applications. This solution is based on 10W MMIC Doherty cell combined in parallel. The MMIC is based on the latest Philips LDMOST technology (Gen 6) and showed state of the art performance: 42% Eff has been measured at IMD3 level of -40dBc. Further improvement of linearity to below -50dBc was provided by digital pre-distortions. We believe this approach can be used to achieve powers above 120W. Moreover this approach will lead to a lower cost, more reliable and manufacturable Doherty product.
引用
收藏
页码：479 / 482
页数：4
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