An Experimental Comparison of GaN, SiC and Si Switching Power Devices

被引：0

作者：

Palmer, Patrick ^{[1
]}

Zhang, Xueqiang ^{[1
]}

Shelton, Edward ^{[1
]}

Zhang, Tianqi ^{[1
]}

Zhang, Jin ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge, England

来源：

IECON 2017 - 43RD ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2017年

基金：

英国工程与自然科学研究理事会;

关键词：

GaN HEMT; SiC MOSFET; Superjunction; IGBT;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences in the switching behaviours of the devices are identified and discussed.

引用

页码：780 / 785

页数：6

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