The Effect of Self-Heating and Electrical Stress induced Polarization in AlGaN/GaN Heterojunction Based Devices

被引：0

作者：

Ahmeda, K. ^{[1
]}

Faramehr, S. ^{[1
]}

Igic, P. ^{[1
]}

Kalna, K. ^{[1
]}

Duffy, S. J. ^{[2
]}

Soltani, A. ^{[3
,4
]}

Benbakhti, B. ^{[2
]}

机构：

[1] Swansea Univ, Coll Engn, Elect Syst Design Ctr, Bay Campus,Fabian Way, Swansea SA1 8EN, W Glam, Wales

[2] Liverpool John Moores Univ, Dept Elect & Elect Engn, Byrom St, Liverpool L3 3AF, Merseyside, England

[3] LN2, Sherbrooke, PQ, Canada

[4] IEMN, Lille, France

来源：

2016 11TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM) | 2016年

关键词：

GAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement(TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Atlas-Silvaco. The self heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied on the Ohmic contacts decreases the polarisation as the source-drain distance is reduced, causing the inverse piezoelectric effect.

引用

页码：203 / 206

页数：4

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