The Effect of Self-Heating and Electrical Stress induced Polarization in AlGaN/GaN Heterojunction Based Devices

被引：0
|
作者：
Ahmeda, K. [1 ]
Faramehr, S. [1 ]
Igic, P. [1 ]
Kalna, K. [1 ]
Duffy, S. J. [2 ]
Soltani, A. [3 ,4 ]
Benbakhti, B. [2 ]
机构：
[1] Swansea Univ, Coll Engn, Elect Syst Design Ctr, Bay Campus,Fabian Way, Swansea SA1 8EN, W Glam, Wales
[2] Liverpool John Moores Univ, Dept Elect & Elect Engn, Byrom St, Liverpool L3 3AF, Merseyside, England
[3] LN2, Sherbrooke, PQ, Canada
[4] IEMN, Lille, France
来源：
2016 11TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM) | 2016年
关键词：
GAN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement(TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Atlas-Silvaco. The self heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied on the Ohmic contacts decreases the polarisation as the source-drain distance is reduced, causing the inverse piezoelectric effect.
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页码：203 / 206
页数：4
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