High cluster formation tendency in Co implanted ZnO

被引：17
|
作者：
Potzger, K. [1 ]
Kuepper, K. [1 ]
Xu, Q. [1 ]
Zhou, S. [1 ]
Schmidt, H. [1 ]
Helm, M. [1 ]
Fassbender, J. [1 ]
机构：
[1] Forschungszentrum, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 02期
关键词：
D O I：
10.1063/1.2955717
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO(0001) single crystals have been implant doped with a maximum of 5 at. % of Co at low temperatures. While as-implanted crystals do not show ferromagnetic properties, postimplantation annealing leads to the transformation of the implanted Co ions into small metallic clusters giving rise to a pronounced hysteresis upon magnetization reversal. The dispersed Co ions are in 2+ oxidation state. Positive magnetoresistance could be observed at low temperatures. (C) 2008 American Institute of Physics.
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页数：5
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