Oxygen-related luminescence centres created in Czochralski silicon

A review is made of the major luminescence systems created in Czochralski (CZ) silicon by various thermal treatments, and by radiation damage with and without subsequent thermal treatments. Detailed investigations of these luminescence systems were carried out during the 1980s. More recent measurements have clarified some issues and shown that some other areas need to be revisited. Other recent measurements have shown that hydrogen has a dramatic effect on the luminescence centres created in both float-zone (FZ) and CZ Si and that several luminescence centres actually contain hydrogen. It has also been demonstrated that these and other centres can be made optically inactive if too much hydrogen is present.