Rapid diagnostics of ASIC circuit marginalities using dynamic laser stimulation

被引：3
|
作者：
Liao, JY [1 ]
Woods, GL
Marks, HL
机构：
[1] NVIDIA Corp, Santa Clara, CA 95050 USA
[2] Credence Syst Corp, Milpitas, CA 95035 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2006年 / 6卷 / 01期
关键词：
defect localization; dynamic laser testing; failure analysis in ICs; laser scanning microscopy;
D O I：
10.1109/TDMR.2006.870352
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The silicon debug process is increasingly important in producing profitable ICs, but faces increasing challenges. In this paper, the authors report the use of a powerful optical probing technique, dynamic laser stimulation (DLS), to rapidly localize marginal circuits that were causing yield loss on two high-performance ASIC chips. The probing results were obtained without detailed information about the circuits in question and without requiring automated test equipment (ATE) for the device stimulation.
引用
收藏
页码：9 / 16
页数：8
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