Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface

被引：2

作者：

Jayasekera, Thushari ^{[1
]}

Kim, K. W. ^{[2
]}

Nardelli, M. Buongiorno ^{[3
,4
]}

机构：

[1] So Illinois Univ, Dept Phys, Carbondale, IL 62901 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[3] Univ N Texas, Dept Phys, Denton, TX 76203 USA

[4] Oak Ridge Natl Lab, Comp Sci & Math Div, Oak Ridge, TN 37831 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

epitaxial graphene; turbostratic; Moire patterns; SiC C-face; GRAPHITE;

D O I：

10.4028/www.scientific.net/MSF.717-720.595

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose an atomistic model to study the interface properties of mis-oriented (Wrbostratic) epitaxial graphene on the 6H-SiC (000-1) surface. Using calculations from first principles, we compare the energetics and structural/electronic properties of AB and turbostratic stacking sequences within a model based on the Si adatom surface reconstruction. Our calculations show that the systems with AB and turbostratic sequences are very close in energy, demonstrating the possibility of observation of Moire patterns in epitaxial graphene on the C-face of 6H-SiC. The two-dimensional electron gas behavior is preserved in the epitaxial turbostratic graphene systems. However, there are deviations from the ideal turbostratic graphene.

引用

页码：595 / +

页数：2

共 50 条

[21] Transport properties of single-layer epitaxial graphene on 6H-SiC (0001)
Jobst, J.
Waldmann, D.
Emtsev, K. V.
Seyller, Th.
Weber, H. B.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 637 - +
[22] Interfacial Properties of Silicon Nitride Grown on Epitaxial Graphene on 6H-SiC Substrate
Yang, M.
Chai, J. W.
Wang, Y. Z.
Wang, S. J.
Feng, Y. P.
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (42): : 22315 - 22318
[23] Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)
Jobst, Johannes
Waldmann, Daniel
Speck, Florian
Hirner, Roland
Maude, Duncan K.
Seyller, Thomas
Weber, Heiko B.
SOLID STATE COMMUNICATIONS, 2011, 151 (16) : 1061 - 1064
[24] Epitaxial graphene on 6H-SiC(0001): Defects in SiC investigated by STEM
Gruschwitz, Markus
Schletter, Herbert
Schulze, Steffen
Alexandrou, Ioannis
Tegenkamp, Christoph
PHYSICAL REVIEW MATERIALS, 2019, 3 (09)
[25] On the electronic properties of defective graphene buffer layer on 6H-SiC(0001)
Huelmo, C. Pereyra
Iribarne, Federico
Denis, Pablo A.
COMPUTATIONAL CONDENSED MATTER, 2021, 26
[26] Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
Bouhafs, C.
Darakchieva, V.
Persson, I. L.
Tiberj, A.
Persson, P. O. A.
Paillet, M.
Zahab, A. -A.
Landois, P.
Juillaguet, S.
Schoeche, S.
Schubert, M.
Yakimova, R.
JOURNAL OF APPLIED PHYSICS, 2015, 117 (08)
[27] Graphene Growth on SiC(000-1): Optimization of Surface Preparation and Growth Conditions
Robinson, Zachary R.
Jernigan, Glenn G.
Bussmann, Konrad M.
Nyakiti, Luke O.
Garces, Nelson Y.
Nath, Anindya
Wheeler, Virginia D.
Myers-Ward, Rachael L.
Gaskill, Kurt
Eddy, Charles R., Jr.
CARBON NANOTUBES, GRAPHENE, AND EMERGING 2D MATERIALS FOR ELECTRONIC AND PHOTONIC DEVICES VIII, 2015, 9552
[28] Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
Riedl, C.
Starke, U.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 219 - 222
[29] The registry of graphene layers grown on SiC(000-1)
Johansson, L. I.
Watcharinyanon, S.
Zakharov, A. A.
Yakimova, R.
Virojanadara, C.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 613 - +
[30] Multilayer epitaxial graphene grown on the SiC (000(1)over-bar) surface; structure and electronic properties
Sprinkle, M.
Hicks, J.
Tejeda, A.
Taleb-Ibrahimi, A.
Le Fevre, P.
Bertran, F.
Tinkey, H.
Clark, M. C.
Soukiassian, P.
Martinotti, D.
Hass, J.
Conrad, E. H.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (37)

← 1 2 3 4 5 →