Reduction of gate current in AlSb/InAs HEMTs using a dual-gate design

被引：4
|
作者：
Boos, JB [1 ]
Kruppa, W [1 ]
Park, D [1 ]
机构：
[1] SFA INC, LANDOVER, MD 20785 USA
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 17期
关键词：
high electron mobility transistors; impact ionisation;
D O I：
10.1049/el:19961088
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dual-gate AlSb/InAs HEMTs with 0.4 mu m gate lengths have been fabricated, and exhibit a significant reduction in the gate leakage current associated with holes generated by impact ionisation. These HEMTs also have decreased output conductance and increased low frequency unilateral gain compared to single gate devices.
引用
收藏
页码：1624 / 1625
页数：2
相关论文
共 50 条
  • [41] AlSb/InAs HEMTs using modulation InAs(Si)-doping
    Boos, JB
    Bennett, BR
    Kruppa, W
    Park, D
    Yang, MJ
    Shanabrook, BV
    ELECTRONICS LETTERS, 1998, 34 (04) : 403 - 404
  • [42] Dual-gate MOSFETs match gate drive to load level
    Schweber, B
    EDN, 1998, 43 (09) : 13 - 13
  • [43] Hematocrit estimation using dual-gate power Doppler
    Nowicki, A.
    Secomski, W.
    Ultrasound in Medicine and Biology, 2000, 26 (SUPPL. 2):
  • [44] MODELING OF SINGLE-GATE AND DUAL-GATE MESFET MIXERS
    MEIERER, R
    TSIRONIS, C
    ELECTRONICS LETTERS, 1984, 20 (02) : 97 - 98
  • [45] 10 GBIT-S AND GATE USING DUAL-GATE GAAS-MESFET
    TELL, R
    ANDERSSON, T
    ENG, ST
    ELECTRONICS LETTERS, 1981, 17 (05) : 201 - 202
  • [46] Dual-gate FET mixer design and fabrication for MMIC's
    Sun, XW
    Cheng, ZQ
    Xia, GQ
    ICMMT'98: 1998 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 1998, : 230 - 233
  • [47] Simulation and design of organic RFID based on dual-gate OFET
    Shen, Shu
    Sun, Lijuan
    Wang, Ruchuan
    Gu, Lei
    2016 3RD INTERNATIONAL CONFERENCE ON INFORMATION SCIENCE AND CONTROL ENGINEERING (ICISCE), 2016, : 1413 - 1416
  • [48] DESIGN AND PERFORMANCE OF A DUAL-GATE GAAS-MESFET UPCONVERTER
    DESALLES, AA
    MICROWAVES & RF, 1983, 22 (05) : 101 - 101
  • [49] Analysis and design of the dual-gate inversion layer emitter transistor
    Udugampola, NK
    McMahon, RA
    Udrea, F
    Amaratunga, GAJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (01) : 99 - 105
  • [50] THE EFFECT OF GATE METALS ON MANUFACTURABILITY OF 0.1 μm METAMORPHIC ALSB/INAS HEMTS FOR ULTRALOW-POWER APPLICATIONS
    Chou, Y. C.
    Lee, L. J.
    Yang, J. M.
    Lange, M. D.
    Nam, P. S.
    Lin, C. H.
    Quach, H.
    Gutierrez, A. L.
    Barsky, M. E.
    Wojtowicz, M.
    Oki, A. K.
    Block, T. R.
    Boos, J. B.
    Bennett, B. R.
    Papanicolaou, N. A.
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 367 - +
12345