Phonon-assisted tunnelling through a quantum dot coupled to magnetic leads

被引:0
|
作者
Rudzinski, W. [1 ]
机构
[1] Adam Mickiewicz Univ Poznan, Dept Phys, PL-61614 Poznan, Poland
来源
MATERIALS SCIENCE-POLAND | 2008年 / 26卷 / 04期
关键词
quantum dot; spin-polarized tunnelling; phonons;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin-polarized transport has been theoretically studied in double barrier tunnelling junctions based on a single level quantum dot interacting with a local phonon mode. It was shown that the electron-phonon interaction gives rise to oscillations of the tunnel magnetoresistance (TMR). In asymmetrical junctions, the polaronic transport through the junction may lead to a significant suppression of the diodelike behaviour. The case of negative effective charging energy has also been analyzed numerically. It was shown in particular that for a mesoscopic diode an interplay between the single-electron cotunnelling and the pair tunnelling processes leads to inversion of TMR.
引用
收藏
页码:879 / 883
页数:5
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