Crystal Structure and Transport Properties of the Homologous Compounds (PbSe)5(Bi2Se3)3m (m=2, 3)

被引:26
|
作者
Sassi, Selma [1 ]
Candolfi, Christophe [1 ]
Delaizir, Gaelle [2 ]
Migot, Sylvie [1 ]
Ghanbaja, Jaafar [1 ]
Gendarme, Christine [1 ]
Dauscher, Anne [1 ]
Malaman, Bernard [1 ]
Lenoir, Bertrand [1 ]
机构
[1] Univ Lorraine, CNRS, UMR 7198, Inst Jean Lamour, 2 Allee Andre Guinier Campus ARTEM, F-54011 Nancy, France
[2] Univ Limoges, CNRS, UMR 7315, SPCTS, Limoges, France
关键词
LONE-PAIR ELECTRONS; LATTICE THERMAL-CONDUCTIVITY; THERMOELECTRIC PROPERTIES; PHASE HOMOLOGIES; EFFICIENCY; TETRAHEDRITE; CHEMISTRY; DESIGN; CANNIZZARITE; PERFORMANCE;
D O I
10.1021/acs.inorgchem.7b02656
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
We report on a detailed investigation of the crystal structure and transport properties in a broad temperature range (2-723 K) of the homologous compounds (PbSe)(5)(Bi2Se3)(3m) for m = 2, 3. Single-crystal X-ray diffraction data indicate that the m = 2, 3 compounds crystallize in the monoclinic space groups C2/m (No. 12) and P2(1)/m (No. 11), respectively. In agreement with diffraction data, high resolution transmission electron microscopy analyses carried out on single crystals show that the three-dimensional crystal structures are built from alternating Pb-Se and m Bi-Se layers stacked along the a axis in both compounds. Scanning electron microcopy and electron-probe microanalyses reveal deviations from the nominal stoichiometry, suggesting a domain of existence in the pseudo binary phase diagram at 873 K. The complex atomic-scale structures of these compounds lead to very low lattice thermal conductivities KL, that approach the glassy limit at high temperatures. A comparison of the KL, values across this series unveiled an unexpected increase with increasing m from m = 1 to m = 3, in contrast to the expectation that increasing the structural complexity should tend to lower the thermal transport. This result points to a decisive role played by the Pb Se/Bi Se interfaces in limiting Kt, in this series. Both compounds behave as heavily doped n-type semiconductors with relatively low electrical resistivity and thermopower values. As a result, moderate peak ZT values of 0.25 and 0.20 at 700 K were achieved in the m = 2, 3 compounds, respectively. The inherent poor ability of these structures to conduct heat suggests that these homologous compounds may show interesting thermoelectric properties when properly optimized by extrinsic dopants.
引用
收藏
页码:422 / 434
页数:13
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