Influence of composition fluctuations in Al(Ga)As barriers on the exciton localization in thin GaAs quantum wells

被引：22
|
作者：
Ramsteiner, M
Hey, R
Klann, R
Jahn, U
Gorbunova, I
Ploog, KH
机构：
[1] Paul-Drude-Institut für Festkörperelektronik, D-10117 Berlin
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.55.5239
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The localization of excitons in thin GaAs/Al(Ga)As quantum wells has been investigated by micro- and time-resolved photoluminescence (FL) spectroscopy. A fine-structured line shape in micro-PL is found not only for exciton recombination in the GaAs well but also, very similarly, for the Al(Ga)As barrier luminescence. By means of time-resolved measurements we show that the observed barrier luminescence probes selectively a barrier region close to the top interface of the quantum well. Our results directly reveal the essential contribution of Al(Ga)As composition fluctuations to the excition localization in GaAs/Al(Ga)As quantum wells.
引用
收藏
页码：5239 / 5242
页数：4
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