共 50 条
- [41] HIGHLY-STRAINED INXGA1-XAS/GAAS MULTIPLE QUANTUM-WELLS FOR ELECTROABSORPTION MODULATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1833 - L1835
- [44] Anti-stokes photoluminescence from Si modulation doped AlyGa1-yAs/AlxGa1-xAs QW and Si double delta doped AlxGa1-xAs Solid State Electron, 1-8 (665-671):
- [45] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/GAAS QUANTUM WELLS PHYSICAL REVIEW B, 1989, 40 (14): : 10017 - 10020
- [46] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/INP QUANTUM WELLS PHYSICAL REVIEW B, 1989, 39 (08): : 5531 - 5534
- [47] Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1-xAs quantum wells PHYSICAL REVIEW B, 1996, 53 (15): : 10116 - 10120
- [49] CONDUCTION-BAND DISCONTINUITIES OF STRAINED AND UNSTRAINED LAYER INXGA1-XAS/GAAS AND INXGA1-XAS/INP HETEROJUNCTIONS AND QUANTUM-WELLS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1991, 124 (02): : K111 - K116
- [50] Influence of strong magnetic fields on the ionization of the modulation-doped donors in AlxGa1-xAs-GaAs-AlyGa1-yAs single quantum wells MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 334 - 340