Magnetotransport and charge transfer studies on delta-modulation-doped InxGa1-xAs/AlyGa1-yAs strained single quantum wells

被引:0
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作者
Jung, M [1 ]
Lee, DU
Kim, TW
Yoo, KH
Kim, MD
Park, HS
Kim, DL
机构
[1] Kwangwoon Univ, Dept Phys, Seoul 139701, South Korea
[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[3] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea
[4] Korea Basic Sci Ctr, Joint Res Facil Div, Taejon 305333, South Korea
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements on a In0.18Ga0.82As/Al0.25Ga0.75As strained single quantum well grown by molecular beam epitaxy have been performed to investigate the existence of the two-dimensional electron gas (2DEG) in the In0.18Ga0.82As single quantum well. The fast Fourier transform for the S-dH data and the observation of the quantum Hall effect clearly indicate 2DEG occupation of a subband in the In0.18Ga0.82 As single quantum well. Electronic subband energy and the corresponding wavefunction in the In0.18Ga0.82As quantum well were calculated by a self-consistent method taking into account exchange-correlation effects together with strain and nonparabolicity effects.
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页码:S439 / S442
页数:4
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