High power high-efficiency 1150-nm quantum-well laser

被引：29

作者：

Erbert, G ^{[1
]}

Bugge, F ^{[1
]}

Fricke, J ^{[1
]}

Ressel, P ^{[1
]}

Staske, R ^{[1
]}

Sumpf, B ^{[1
]}

Wenzel, H ^{[1
]}

Weyers, M ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2005年 / 11卷 / 05期

关键词：

gallium arsenide; high-power lasers; semiconductor lasers; waveguides;

D O I：

10.1109/JSTQE.2005.853843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on fie laser performance. Using a thick GaAs waveguide layer broad area devices with low vertical divergence of 20 degrees FWHM and reliable operation at a power level of 80-mW/mu m stripe width were demonstrated.

引用

页码：1217 / 1222

页数：6

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