The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface

被引：4

作者：

Benemanskaya, G. V. ^{[1
]}

Lapushkin, M. N. ^{[1
]}

Marchenko, D. E. ^{[2
]}

Timoshnev, S. N. ^{[3
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Helmholtz Zentrum Berlin Mat & Energie, Elektronenspeicherring BESSY 2, Berlin, Germany

[3] St Petersburg Natl Res Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2018年 / 44卷 / 03期

关键词：

GAN(0001) SURFACE; CS ADSORPTION; PHOTOEMISSION; STATES; GAN;

D O I：

10.1134/S106378501803015X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic structures of the n-GaN(0001) surface and Cs/n-GaN(0001) interface with submonolayer Cs coverages were studied for the first time in situ by the photoelectron spectroscopy (PES) method. The spectra of photoemission from the valence band, surface electron states, and core levels (Ga 3d, Cs 4d, Cs 5p) under synchrotron excitation were measured in a range of photon energies within 50-150 eV. Evolution of the spectrum of surface states near the valence-band maximum was revealed by PES during the adsorption of Cs atoms. A metallic character of the Cs/n-GaN(0001) nano-interface is demonstrated.

引用

页码：247 / 250

页数：4

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