Optical and structural characteristics of ZnO films doped with gallium

被引：0
|
作者：
Novodvorsky, OA [1 ]
Panchenko, VY
Khramova, OD
Gorbatenko, LS
Butorina, YA
Wenzel, C
Bartha, JW
机构：
[1] Russian Acad Sci, Inst Laser & Informat Technol, Shatura, Russia
[2] Tech Univ Dresden, Inst Semicond & Microsyst Technol, Dresden, Germany
来源：
INTERNATIONAL CONFERENCE ON LASERS, APPLICATIONS, AND TECHNOLOGIES 2005: LASER-ASSISTED MICRO- AND NANOTECHNOLOGIES | 2006年 / 6161卷
关键词：
ZnO films; pulsed laser deposition;
D O I：
10.1117/12.675049
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The ZnO films have been produced on the monocrystalline sapphire substrates (0001) by the pulsed laser deposition method. The photoluminescence spectra of these films have been obtained. The dependence of ZnO films transmission on the gallium admixture concentration has been determined for the spectral region of 200 to 3200 nm. It has been ascertained that the increase in gallium admixture is responsible for the shift of fundamental absorption band edge to the blue, and for the reduction in ZnO films transparency in the IR region. The dependence of the crystallographic parameters (lattice constant C) on the gallium admixture concentration and on the deposition parameters has been found.
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页数：10
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