Models of Electron Transport in Single Layer Graphene

被引：31
|
作者：
Guinea, F. [1 ,2 ]
机构：
[1] Inst Ciencia Mat, Madrid 28049, Spain
[2] DIPC, San Sebastian 20018, Spain
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2008年 / 153卷 / 5-6期
关键词：
Graphene; Transport; Scattering; Phaseshift; 73; 20; -r; 21; La; 23; Ad;
D O I：
10.1007/s10909-008-9835-1
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The main features of the conductivity of doped single layer graphene are analyzed, and models for different scattering mechanisms are presented. Many possible dependencies of the cross section on the Fermi wavelength are identified, depending on the type of scattering mechanism. Defects with internal structure, such as ripples, show non monotonous dependencies, with maxima when the Fermi wavelength is comparable to the typical scale of the defect.
引用
收藏
页码：359 / 373
页数：15
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