Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection

被引：0

作者：

Shi, Xuewen ^{[1
,2
]}

Xu, Guangwei ^{[1
,2
]}

Duan, Xinlv ^{[1
,2
]}

Lu, Nianduan ^{[1
,2
]}

Chen, Jiezhi ^{[3
]}

Li, Ling ^{[1
,2
]}

Liu, Ming ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

[2] Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing, Jiangsu, Peoples R China

[3] Shandong Univ, Sch informat Sci & Engn, Jinan, Shandong, Peoples R China

来源：

2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017) | 2017年

基金：

美国国家科学基金会;

关键词：

Metal-organic interface; Energy level alignment; Exponential density of states; Electrostatic model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical description of energy level alignment at metal-organic interface based on a detailed electrostatic model and exponential density of states is presented here. The calculated alignment between the Fermi energy of electrode and the organic transport energy shows good quantitative agreement with the proposed numerical electrostatic model and experimental data, indicating that the analytical model can well describe the material disorder and carrier density. More important, the simulations highlight that the electrode with high effective work functions and the organic material with large dielectric constant can facilitate the hole injection from metal to organic. Finally, the Gaussian distribution density of states has compare to the exponential model, confirmed the accuracy of the analytical description for energy level alignment.

引用

页码：225 / 228

页数：4

共 50 条

[21] Energy level alignment at organic/metal interfaces studied by UV photoemission: Breakdown of traditional assumption of a common vacuum level at the interface
Ishii, H
Seki, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (08) : 1295 - 1301
[22] Energy level alignment at organic semiconductor/metal interfaces: Effect of polar self-assembled monolayers at the interface
Demirkan, K.
Mathew, A.
Weiland, C.
Yao, Y.
Rawlett, A. M.
Tour, J. M.
Opila, R. L.
JOURNAL OF CHEMICAL PHYSICS, 2008, 128 (07):
[23] The interplay between interface structure, energy level alignment and chemical bonding strength at organic-metal interfaces
Willenbockel, M.
Lueftner, D.
Stadtmueller, B.
Koller, G.
Kumpf, C.
Soubatch, S.
Puschnig, P.
Ramsey, M. G.
Tautz, F. S.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (03) : 1530 - 1548
[24] Energy level alignment at organic/metal interfaces: Dipole and ionization potential
Peisert, H
Knupfer, M
Fink, J
APPLIED PHYSICS LETTERS, 2002, 81 (13) : 2400 - 2402
[25] Energy level alignment at organic/metal interfaces studied by UV photoemission
Seki, K
Ito, E
Ishii, H
SYNTHETIC METALS, 1997, 91 (1-3) : 137 - 142
[26] Energy Level Alignment and Interactions at Potential Contacts for Spin Injection into Organic Semiconductors
Grobosch, Mandy
Doerr, Katrin
Gangineni, Ramesh B.
Knupfer, Martin
ADVANCED ENGINEERING MATERIALS, 2009, 11 (04) : 285 - 290
[27] Interface Engineering in Organic Electronics: Energy-Level Alignment and Charge Transport
Li, Peicheng
Lu, Zheng-Hong
SMALL SCIENCE, 2021, 1 (01):
[28] Interface Dipoles for Tuning Energy Level Alignment in Organic Thin Film Devices
Nueesch, Frank A.
CHIMIA, 2013, 67 (11) : 796 - 803
[29] Energy shift and wave function overlap of metal-organic interface states
Marks, M.
Zaitsev, N. L.
Schmidt, B.
Schwalb, C. H.
Schoell, A.
Nechaev, I. A.
Echenique, P. M.
Chulkov, E. V.
Hoefer, U.
PHYSICAL REVIEW B, 2011, 84 (08)
[30] Energy band and vacuum level alignment at a semiconductor-molecule-metal interface
Cleri, Fabrizio
APPLIED PHYSICS LETTERS, 2008, 92 (10)

← 1 2 3 4 5 →