Development of high resistant anti-reflection coating by using Al2O3/SiO2 multilayer

被引:4
|
作者
Ochi, Yoshihiro [1 ]
Nagashima, Keisuke [1 ]
Okada, Hajime [1 ]
Tanaka, Momoko [1 ]
Tateno, Ryo [2 ]
Furukawa, Yasuyuki [2 ]
Sugiyama, Akira [1 ]
机构
[1] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, 8-1-7 Umemi Dai, Kyoto 6190215, Japan
[2] Shimadzu Co Ltd, Kyoto 6048511, Japan
关键词
Yb:YAG thin-disk amplifier; anti-reflection coating; Al2O3/SiO2; multilayer; electron beam evaporation; LASER; PICOSECOND;
D O I
10.1117/12.2030096
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We developed high-resistant anti-reflection (AR) coating by using Al2O3/SiO2 multilayer for Yb:YAG thin disk amplifier. The AR coating was designed both for 940 nm of pump laser at an incident angle of 30 degrees and for 1030 nm of seed laser at 5 degrees. The Al2O3/SiO2 multilayer was deposited by using the electron beam evaporation technique on a fused silica substrate and then the laser induced damage threshold was evaluated. The sample was irradiated by 1030 nm laser with 520 ps duration delivered from the Yb: YAG thin-disk regenerative amplifier. The measured damage threshold of the Al2O3/SiO2 AR coating was 75 J/cm(2).
引用
收藏
页数:6
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