Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

被引：2

作者：

Lebedev, D. V. ^{[1
]}

Kalyuzhnyy, N. A. ^{[1
]}

Mintairov, S. A. ^{[1
]}

Belyaev, K. G. ^{[1
]}

Rakhlin, M. V. ^{[1
]}

Toropov, A. A. ^{[1
]}

Brunkov, P. ^{[1
,6
]}

Vlasov, A. S. ^{[1
]}

Merz, J. ^{[2
]}

Rouvimov, S. ^{[2
]}

Oktyabrsky, S. ^{[3
]}

Yakimov, M. ^{[3
]}

Mukhin, I. V. ^{[4
]}

Shelaev, A. V. ^{[5
]}

Bykov, V. A. ^{[5
]}

Romanova, A. Yu. ^{[6
]}

Buryak, P. A. ^{[6
]}

Mintairov, A. M. ^{[1
,2
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] Univ Notre Dame, Notre Dame, IN 46556 USA

[3] SUNY Albany, Inst Mat, Albany, NY 12203 USA

[4] St Petersburg Acad Univ, St Petersburg 194021, Russia

[5] NT MDT Spectrum Instruments, Zelenograd 124460, Russia

[6] St Petersburg Polytech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 04期

基金：

俄罗斯科学基金会;

关键词：

D O I：

10.1134/S1063782618040206

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100-200 nm, together with a bimodal height distribution having maxima at similar to 5 and similar to 15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 mu m(-2). The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.

引用

页码：497 / 501

页数：5

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