First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction

被引:6
|
作者
He, Xiao-Min [1 ]
Chen, Zhi-Ming [1 ]
Huang, Lei [1 ]
Li, Lian-Bi [1 ,2 ]
机构
[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China
[2] Xian Polytech Univ, Sch Sci, Xian 710048, Peoples R China
来源
MODERN PHYSICS LETTERS B | 2015年 / 29卷 / 29期
基金
中国国家自然科学基金;
关键词
First-principles calculations; transmission electron microscopy; heterojunction; work of adhesion; electronic property; GENERALIZED GRADIENT APPROXIMATION; SI FILMS; C-FACE; PSEUDOPOTENTIALS; GAS;
D O I
10.1142/S0217984915501821
中图分类号
O59 [应用物理学];
学科分类号
摘要
Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)//6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)//6H-SiC(0001) heterojunction are Si[2-1-1]/6H-SiC[10 (1) over bar0] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.
引用
收藏
页数:9
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