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First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction
被引:6
|作者:
He, Xiao-Min
[1
]
Chen, Zhi-Ming
[1
]
Huang, Lei
[1
]
Li, Lian-Bi
[1
,2
]
机构:
[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China
[2] Xian Polytech Univ, Sch Sci, Xian 710048, Peoples R China
来源:
基金:
中国国家自然科学基金;
关键词:
First-principles calculations;
transmission electron microscopy;
heterojunction;
work of adhesion;
electronic property;
GENERALIZED GRADIENT APPROXIMATION;
SI FILMS;
C-FACE;
PSEUDOPOTENTIALS;
GAS;
D O I:
10.1142/S0217984915501821
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)//6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)//6H-SiC(0001) heterojunction are Si[2-1-1]/6H-SiC[10 (1) over bar0] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.
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页数:9
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